silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 1/8 electrostatic sensitive device observe handling precautions description RD100HHF1 is a mos fet type transistor specifically designed for hf high power amplifiers applications. features high power and high gain: pout>100w, gp>11.5db @vdd=12.5v,f=30mhz high efficiency: 60%typ.on hf band application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant RD100HHF1-101 is a rohs compliant products. rohs compliance is indicate by the letter ?g? after the lot marking. absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 50 v v gss gate to source voltage vds=0v +/-20 v pch channel dissipation tc=25 c 176.5 w pin input power zg=zl=50 ? 12.5 w id drain current - 25 a tch channel temperature - 175 c tstg storage temperature - -40 to +175 c rth j-c thermal resistance junction to case 0.85 c/w note 1: above paramet ers are guaranteed independently. electrical characteristics (tc=25 c unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zerogate voltage drain current v ds =17v, v gs =0v - - 10 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 1.5 - 4.5 v pout output power f=30mhz ,v dd =12.5v 100 110 - w d drain efficiency pin=7w, idq=1.0a 55 60 - % load vswr tolerance v dd =15.2v,po=100w(pin control) f=30mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change. outline drawing 9.6+/-0.3 3.3+/-0.2 4-c2 10.0+/-0.3 r1.6+/-0.15 24.0+/-0.6 18.5+/-0.3 5.0+/-0.3 3 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 2 4.5+/-0.7 6.2+/-0.7 0.1 +0.05 -0.01 pin 1.drain 2.source 3.gate unit:mm
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 2/8 electrostatic sensitive device observe handling precautions typical characteristics channel dissipation vs. am bient t em perat ure 0 40 80 120 160 200 0 40 80 120 160 200 a mbient tempera ture ta ( c) channel dissipation pch(w ) ... vds vs. crss characteristics 0 10 20 30 40 0102030 vds(v) crss(pf) ta=+25c f=1mhz vds vs. coss characteristics 0 100 200 300 400 500 0 102030 vds(v) coss(pf) ta=+25c f=1mhz vds vs. ciss characteristics 0 50 100 150 200 250 300 0102030 vds(v) ciss(pf) ta=+25c f=1mhz vds-ids characteristics 0 2 4 6 8 10 0246810 vds(v) ids(a) ta=+25c vg s= 5.7v vg s=5.4v vg s= 5.1v vg s=4.8v vg s=4.2v vg s=6v vg s=4.5v vgs-ids characteristics 0 2 4 6 8 10 01234567 vgs(v) ids(a) ta=+25c vds=10v
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 3/8 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics 0 10 20 30 40 50 0 10203040 pin(dbm) po(dbm) , gp(db) , idd(a) 0 20 40 60 80 100 d(%) ta=+25c f=30mhz vdd=12.5v idq=1a po 3 33 gp pin-po characteristics 0 20 40 60 80 100 120 0246810 pin(w) pout(w) , idd(a) 20 30 40 50 60 70 80 d(%) po d idd ta=25c f=30mhz vdd=12.5v idq=1a vdd-po characteristics 0 20 40 60 80 100 120 140 4 6 8 10 12 14 vdd(v) po(w) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 idd(a) po idd ta=25c f=30mhz pin=7w idq=1a zg=zi=50 ohm vgs-ids characteristics 2 0 2 4 6 8 10 01234567 vgs(v) ids(a) vds=10v tc=-25~+75c -25c +75c +25c
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 4/8 electrostatic sensitive device observe handling precautions test circuit(f=30mhz) 93 75 30 14 8 12 l4:1turns,i.d10mm,d1.6mm silver plateted copper wire 53 50 100 1000pf l4 200pf 180pf 4.7 ohm l3 220pf 4.7k ohm l3:5turns,i.d6mm,d0.7mm copper wire p=1mm l2:10turns,i.d8mm,d1.6mm silver plateted copper wire l2 l1 9.1k ohm 93 90 18 4.5 180/200pf dimensions:mm pin vdd vgg l1:8turns,i.d8mm,d1.6mm silver plateted copper wire 330uf,50v c1 pout c1:100pf, 0.022uf, 0.1uf in parallel note:board material-teflon substrate micro strip line width=4.2mm / 50 ohm,er:2.7,t=1.6mm 21 24 43 19 220pf 82pf c1 c1 10uf,50v c1 56 100 20pf 20pf 82/82pf 82/330/82pf 82pf 1000pf 82/330/82pf 68
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 5/8 electrostatic sensitive device observe handling precautions input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 30 8.86-j14.31 0.64-j0.01 po=115w, vdd=12.5v,pin=7w f=30mhz zout f=30mhz zin zo=10 ?
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 6/8 electrostatic sensitive device observe handling precautions RD100HHF1 s-parameter dat a (@vdd=12.5v, id=800ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10 0.835 -158.6 31.451 94.8 0.014 5.2 0.770 -162.1 30 0.839 -171.1 10.628 79.3 0.014 -9.9 0.764 -171.6 50 0.849 -172.9 6.212 71.0 0.012 -20.7 0.786 -171.4 100 0.886 -173.9 2.749 54.1 0.012 -34.1 0.842 -171.4 150 0.915 -175.1 1.541 40.2 0.009 -27.8 0.880 -173.6 200 0.932 -176.4 0.972 31.6 0.007 -36.9 0.908 -174.3 250 0.945 -177.3 0.671 24.5 0.006 -54.4 0.946 -176.2 300 0.951 -178.2 0.481 20.1 0.005 -30.4 0.941 -177.4 350 0.958 -179.3 0.365 15.2 0.003 13.1 0.952 -178.3 400 0.960 -179.8 0.291 13.4 0.003 -18.0 0.974 -179.8 450 0.964 179.5 0.243 8.5 0.004 45.3 0.963 179.6 500 0.966 178.7 0.195 6.8 0.003 42.3 0.971 178.6 550 0.970 178.2 0.154 5.2 0.004 78.6 0.975 177.5 600 0.967 177.5 0.133 4.8 0.005 80.1 0.965 176.8 650 0.971 177.0 0.119 1.0 0.003 72.0 0.972 176.0 700 0.970 176.5 0.109 -1.3 0.006 61.3 0.973 175.1 750 0.969 175.6 0.092 0.6 0.007 67.2 0.964 174.9 800 0.970 175.2 0.080 -4.0 0.005 82.2 0.974 173.9 850 0.976 174.5 0.073 -1.9 0.007 78.7 0.969 173.3 900 0.973 173.9 0.067 -5.4 0.008 69.9 0.973 172.6 950 0.973 173.2 0.058 4.1 0.008 86.8 0.973 171.5 1000 0.977 172.6 0.049 -8.7 0.011 78.7 0.971 171.7 s11 s21 s12 s22
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 7/8 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w RD100HHF1 17 aug 2010 8/8 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these
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